EC439 Submicron Devices

Course Name: 

EC439 Submicron Devices


B.Tech (ECE)


Programme Specific Electives (PSE)

Credits (L-T-P): 

(3-0-0) 3


Review of basic device physics. MOS capacitor. Transistor theory. Scaling - Moore's law on technology scaling, MOS device scaling theory, Short channel effects, sub threshold leakage, Punch through, DIBL, High field mobility, Velocity saturation and overshoot. Reliability. Various definitions of channel length, Performance metric of digital technology, Transistor design trade-offs, Technology case studies, Silicon on Insulator (SOI) devices, Partially depleted and fully depleted SOI, Floating body effects, SOI for low power, Interconnects in sub micron technology, Foundry technology, International Technology Roadmap for Semiconductors (ITRS).


Yaun Taur, Tak H. Ning, Fundamentals of modern VLSI devices, Cambridge university press, 1998.
B. G. Streetman & S. Banerjee, Solid State Electronic Devices, Prentice Hall, 1999.
M. K. Achuthan and K. N. Bhat, Fundamentals of Semiconductor Devices, McGraw Hill, 2006
A. K. Dutta, Semiconductor Devices and Circuits, Oxford Univ. Press, 2008.
M. S. Tyagi, Introduction to Semiconductor Materials and Devices, John Wiley, 1991.
ITRS Road map -

Contact us

Dr. T. Laxminidhi,  Professor and Head, 
Department of E&C, NITK, Surathkal
P. O. Srinivasnagar,
Mangalore - 575 025 Karnataka, India.

  • Hot line: +91-0824-2473046

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