EC446 Submicron Devices

Course Name: 

EC446 Submicron Devices


B.Tech (ECE)


Programme Specific Electives (PSE)

Credits (L-T-P): 

(3-1-0) 4


Review of basic device physics. MOS capacitor. Transistor theory. Scaling - Moore's law on technology scaling, MOS device scaling theory, Short channel effects, sub threshold leakage, Punch through, DIBL, High field mobility, Velocity saturation and overshoot. Reliability. Various definitions of channel length, Performance metric of digital technology, Transistor design trade-offs, Technology case studies, Silicon on Insulator (SOI) devices, Partially depleted and fully depleted SOI, Floating body effects, SOI for low power, Interconnects in sub micron technology, Foundry technology, International Technology Roadmap for Semiconductors (ITRS).


J. A. del Alamo Integrated Microelectronic Devices: Physics and Modeling, Pearson, 2017
Yaun Taur, Tak H. Ning, Fundamentals of modern VLSI devices, Cambridge university press, 1998.
B. G. Streetman & S. Banerjee, Solid State Electronic Devices, Prentice Hall, 1999.
M. K. Achuthan and K. N. Bhat, Fundamentals of Semiconductor Devices, McGraw Hill, 2006
Nandita Dasgupta, Amitava Dasgupta, Semiconductor Devices: Modelling And Technology, Phi, 2009
A. K. Dutta, Semiconductor Devices and Circuits, Oxford Univ. Press, 2008.
ITRS Road map -


Electronics and Communication Engineering(ECE)

Contact us

Prof. N. Shekar V. Shet, Professor and Head, 
Department of ECE, NITK, Surathkal
P. O. Srinivasnagar,
Mangalore - 575 025 Karnataka, India.

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