EC446 Submicron Devices
Course Name:
EC446 Submicron Devices
Programme:
Category:
Credits (L-T-P):
Content:
Review of basic device physics. MOS capacitor. Transistor theory. Scaling - Moore's law on technology scaling, MOS device scaling theory, Short channel effects, sub threshold leakage, Punch through, DIBL, High field mobility, Velocity saturation and overshoot. Reliability. Various definitions of channel length, Performance metric of digital technology, Transistor design trade-offs, Technology case studies, Silicon on Insulator (SOI) devices, Partially depleted and fully depleted SOI, Floating body effects, SOI for low power, Interconnects in sub micron technology, Foundry technology, International Technology Roadmap for Semiconductors (ITRS).